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Evidence of type‐II band alignment at the ordered GaInNP to GaAs heterointerface
Author(s) -
Hsu H. P.,
Huang Y. N.,
Huang Y. S.,
Sitarek P.,
Tiong K. K.,
Tu C. W.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881403
Subject(s) - heterojunction , molecular beam epitaxy , polarization (electrochemistry) , enhanced data rates for gsm evolution , spectral line , materials science , condensed matter physics , nitrogen , electronic band structure , chemistry , crystallography , epitaxy , optoelectronics , physics , nanotechnology , layer (electronics) , telecommunications , organic chemistry , astronomy , computer science
Polarized piezoreflectance (PzR) and photoreflectance (PR) are employed to study band alignment in Ga 0.46 In 0.54 N y P 1– y /GaAs heterostructures grown by gas‐source molecular‐beam epitaxy. The features near the band edge of Ga 0.46 In 0.54 N y P 1– y show strong polarization dependence, indicating the existence of some degree of ordering of these samples. The PR spectra exhibit Franz–Keldysh Oscillations (FKOs) above the band edge of GaAs. The electric fields in the GaAs region are evaluated by analyzing the FKOs and found to decrease with increasing nitrogen content. The type‐II band alignment at the Ga 0.46 In 0.54 N y P 1– y /GaAs interface is concluded for the alloys with nitrogen content y larger than 0.5% based on the appearance of additional features below band edge of GaAs. These features are attributed to the spatially indirect type‐II transitions in the vicinity of interface region between Ga 0.46 In 0.54 N y P 1– y and GaAs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)