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Impact ionization in semiconductors: recent progress on non‐local effects
Author(s) -
Marsland John S.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881317
Subject(s) - electric field , ionization , overshoot (microwave communication) , monte carlo method , impact ionization , space (punctuation) , statistical physics , measure (data warehouse) , physics , field (mathematics) , computational physics , atomic physics , mathematics , statistics , quantum mechanics , computer science , ion , telecommunications , database , pure mathematics , operating system
A model of the ionization pathlength PDF is reformulated with new parameters that have more physical significance and allow further investigation. The transition from the dead space effect to the dead space plus resonance effect is investigated and a new measure, the overshoot factor, is suggested as the method for indicating the degree of resonant behaviour. The non‐local model is extended for non‐uniform electric field profiles. When this extended model is fitted to Monte Carlo data derived for four different electric field profiles, a fairly consistent set of parameters is found. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)