Observation of non‐radiative de‐excitation processes in silicon nanocrystals | Zendy

Knights A. P. | Zendy; Milgram J. N. | Zendy; Wojcik J. | Zendy; Mascher P. | Zendy; Crowe I. | Zendy; Sherliker B. | Zendy; Halsall M. P. | Zendy; Gwilliam R. M. | Zendy

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Observation of non‐radiative de‐excitation processes in silicon nanocrystals

Author(s) -

Knights A. P.,

Milgram J. N.,

Wojcik J.,

Mascher P.,

Crowe I.,

Sherliker B.,

Halsall M. P.,

Gwilliam R. M.

Publication year - 2009

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200881306

Subject(s) - radiative transfer , nanocrystal , excitation , silicon , luminescence , auger , ion , auger effect , materials science , radiation , optoelectronics , chemistry , atomic physics , nanotechnology , optics , physics , organic chemistry , quantum mechanics

We describe the impact of non‐radiative de‐excitation mechanisms on the optical emission from silicon nanocrystals formed in SiO 2 . Auger excitation via free carriers deliberately introduced through phosphorus ion implantation, shows a monotonic increase with increasing phosphorus concentration which can be modelled adequately using a simple statistical approach. We also report a reduction in nanocrystal luminescence intensity with increasing exposure to UV radiation and suggest this phenomenon results from the introduction of non‐radiative defects in the Si/SiO 2 network. The effect of UV radiation varies significantly depending on the sample preparation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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