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Observation of non‐radiative de‐excitation processes in silicon nanocrystals
Author(s) -
Knights A. P.,
Milgram J. N.,
Wojcik J.,
Mascher P.,
Crowe I.,
Sherliker B.,
Halsall M. P.,
Gwilliam R. M.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881306
Subject(s) - radiative transfer , nanocrystal , excitation , silicon , luminescence , auger , ion , auger effect , materials science , radiation , optoelectronics , chemistry , atomic physics , nanotechnology , optics , physics , organic chemistry , quantum mechanics
We describe the impact of non‐radiative de‐excitation mechanisms on the optical emission from silicon nanocrystals formed in SiO 2 . Auger excitation via free carriers deliberately introduced through phosphorus ion implantation, shows a monotonic increase with increasing phosphorus concentration which can be modelled adequately using a simple statistical approach. We also report a reduction in nanocrystal luminescence intensity with increasing exposure to UV radiation and suggest this phenomenon results from the introduction of non‐radiative defects in the Si/SiO 2 network. The effect of UV radiation varies significantly depending on the sample preparation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)