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CuI/Zn 2 x (CuIn) 1– x S 2 /AgIn 5 S 8 double heterojunction solar cells
Author(s) -
Konovalov Igor,
Makhova Liudmila,
Roussak Liudmila
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881213
Subject(s) - heterojunction , band gap , x ray photoelectron spectroscopy , band offset , chemistry , solar cell , electronic band structure , optoelectronics , open circuit voltage , crystallography , materials science , physics , condensed matter physics , valence band , voltage , nuclear magnetic resonance , quantum mechanics
First succesfull attempts to apply ZnS–CuInS 2 mixed crystals in double heterojunction p–i–n solar cells in combination with AgIn 5 S 8 and CuI are presented. Besides of studying the optoelectronic properties of the heterojunction structures, a special attention is paid to the problem of optimal band offsets and of the chemical stability. The influence of band offsets on the conversion efficiency was treated by simulation using SCAPS software, whereas the experimental band offsets were measured using X‐ray photoelectron spectroscopy. The trend of the open circuit voltage change vs. ZnS concentration can be explained by the observed change of the band offset at the interface with AgIn 5 S 8 . For each combination of the n‐type and p‐type materials in a p–i–n heterostructure, a certain maximum possible band gap in the i‐type material exists, still allowing the perfect band alignment. This band gap is about 1.2 eV for AgIn 5 S 8 + CuI combination. The band gaps of all ZnS–CuInS 2 materials being larger than 1.5 eV are too large to be used in optimal double heterojunction devices in this system. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)