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Spatially resolved characterization of chemical species and crystal structures in CuInS 2 and CuGa x Se y thin films using Raman microscopy
Author(s) -
Schmid Thomas,
Camus Christian,
Lehmann Sebastian,
AbouRas Daniel,
Fischer ChristianHerbert,
LuxSteiner Martha Christina,
Zenobi Renato
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881156
Subject(s) - raman spectroscopy , characterization (materials science) , thin film , analytical chemistry (journal) , microscopy , chalcopyrite , chemical imaging , chemistry , layer (electronics) , crystal structure , crystal (programming language) , microprobe , materials science , mineralogy , crystallography , nanotechnology , optics , organic chemistry , copper , programming language , physics , remote sensing , geology , computer science , hyperspectral imaging
This study demonstrates the potential of Raman microscopy in the analysis of thin film cross‐sections. Raman maps of the photovoltaic material CuInS 2 (CIS), which was prepared by the spray ion layer gas reaction method, revealed the spatial distribution of two different CIS modifications – chalcopyrite‐type and CuAu I‐type CIS – as well as contaminants and segregates with a lateral resolution of approx. 400 nm. Additionally, the chemical heterogeneity of a CuGaSe 2 /CuGa 3 Se 5 bi‐layer stack was clearly resolved. Raman microscopy provides a convenient way to simultaneously probe the chemical and structural properties of a sample. Based on Raman spectra, chemical species and even different crystal structures of inorganic compounds can be identified. Knowledge of the distribution of different phases and contaminants in thin films is crucial for further improvements of the coating process. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)