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“Etching under the corner” – inclined macropores by reactive ion etching
Author(s) -
Grigoras Kestutis,
Franssila Sami
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200881066
Subject(s) - etching (microfabrication) , macropore , reactive ion etching , materials science , silicon , layer (electronics) , deep reactive ion etching , ion , oxide , silicon oxide , aluminium , composite material , optoelectronics , chemistry , silicon nitride , metallurgy , mesoporous material , biochemistry , organic chemistry , catalysis
Deep reactive ion etching at cryogenic temperatures has been used for a macropore formation in silicon. A double‐mask set‐up was applied. The first mask of a patterned thin aluminum or silicon oxide layer determined the pore size and density, and thicker patterns of silicon, glass, or SU‐8 acted as a secondary mask changing the angle of the etched pores. Up to 45° inclined macropores have been obtained at the edges of a secondary mask. The inclination dependencies on the shape and structure of the secondary mask and on the etching parameters have been investigated. The effect is explained by the non‐uniformity of etching ion direction at the sidewall of a thick secondary mask. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)