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Beyond the AlGaN/GaN HEMT: new concepts for high‐speed transistors
Author(s) -
Palacios Tomas
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200880957
Subject(s) - high electron mobility transistor , transistor , amplifier , power (physics) , optoelectronics , nitride , gallium nitride , semiconductor , materials science , key (lock) , electrical engineering , computer science , engineering , nanotechnology , physics , computer security , cmos , quantum mechanics , layer (electronics) , voltage
Abstract Solid state power amplifiers operating at mm‐ and sub‐mm‐wave frequencies are key components of numerous communication, sensors and defense systems. Nitride semiconductors have the potential to provide unprecedented levels of power at these frequencies. However, a multidimensional design and optimization is required to achieve acceptable levels of power gain and efficiency at high frequencies. In this paper we discuss some of the main challenges to increase the operating frequency of nitride transistors. New solutions are proposed to increase the electron confinement, electron velocity and access resistances of deeply scaled devices (Abstract figure) and to unleash their great potential. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)