Premium
Nitride‐based quantum structures and devices on modified GaN substrates
Author(s) -
Perlin Piotr,
Franssen Gijs,
Szeszko Justyna,
Czernecki R.,
Targowski Grzegorz,
Kryśko Marcin,
Grzanka Szymon,
Nowak Grzegorz,
LitwinStaszewska Elżbieta,
Piotrzkowski Ryszard,
Leszczyński Mike,
Łucznik Bolek,
Grzegory Izabella,
Jakieła Rafał,
Albrecht Martin,
Suski Tadek
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200880911
Subject(s) - cathodoluminescence , misorientation , indium , materials science , optoelectronics , nitride , substrate (aquarium) , epitaxy , doping , gallium nitride , indium gallium nitride , light emitting diode , nanotechnology , metallurgy , microstructure , luminescence , layer (electronics) , oceanography , geology , grain boundary
We have studied the properties of InGaN layers and quantum wells grown on gallium nitride substrates with intentional surface misorientation with respect to its crystalline c ‐axis. Misorientation varied in the range from 0 up to 2 degree. The indium content was changed by using the different growth temperature (between 750 °C and 820 °C) during metalorganic vapor phase epitaxy. With increasing misorientation angle the average indium content decreased significantly. This effect was accompanied by the strong increase of the emission line bandwidth suggesting more pronounced indium segregation. The results of cathodoluminescence measurements show that these effects correspond to different number of atomic steps/terraces existing on the surface of gallium nitride substrate. Very interesting result is also demonstrated concerning p‐type GaN layers. With increasing misorientation, the free hole density drastically increases above 10 18 cm –3 . This improvement in p‐type doping is not related to the increased Mg concentration but to the reduction in the compensating donor density. Using this advantage we demonstrate nitride light emitters with improved electrical properties. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)