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Three‐dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs
Author(s) -
Fündling Sönke,
Li Shunfeng,
Sökmen Ünsal,
Merzsch Stephan,
Hinze Peter,
Weimann Thomas,
Jahn Uwe,
Trampert Achim,
Riechert Henning,
Peiner Erwin,
Wehmann HergoHeinrich,
Waag Andreas
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200880841
Subject(s) - nanorod , materials science , cathodoluminescence , nanopillar , metalorganic vapour phase epitaxy , optoelectronics , epitaxy , heterojunction , silicon , substrate (aquarium) , nanotechnology , nanostructure , luminescence , layer (electronics) , oceanography , geology
Three‐dimensionally patterned Si(111) substrates are used to grow GaN based heterostructures by metalorganic vapour phase epitaxy, with the goal of fabricating well controlled, defect reduced GaN‐based nanoLEDs. In contrast to other approaches to achieve GaN nanorods, we employed silicon substrates with deep etched nanopillars to control the GaN nanorods growth by varying the size and distance of the Si pillars. The small footprint of GaN nanorods grown on Si pillars minimise the influence of the lattice mismatched substrate and improve the material quality. For the Si pillars an inductively coupled plasma dry‐etching process at cryogenic temperature has been developed. An InGaN/GaN multi quantum well (MQW) structure has been incorporated into the GaN nanorods. We found GaN nanostructures grown on top of the silicon pillars with a pyramidal shape. This shape results from a competitive growth on different facets as well as from surface diffusion of the growth species. Spatially resolved optical properties of the structures are analysed by cathodoluminescence. Strongly spatial‐dependent MQW emission spectra indicate the growth rate differences on top of the rods. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)