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Effect of aluminum carbide buffer layer on growth and self‐separation of m ‐plane GaN by hydride vapor phase epitaxy
Author(s) -
Sasaki Hitoshi,
Sunakawa Haruo,
Sumi Norihiko,
Yamamoto Kazutomi,
Usui Akira
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200880834
Subject(s) - sapphire , materials science , epitaxy , metalorganic vapour phase epitaxy , layer (electronics) , chemical vapor deposition , substrate (aquarium) , hydride , wafer , optoelectronics , analytical chemistry (journal) , composite material , chemistry , optics , metallurgy , metal , laser , oceanography , physics , geology , chromatography
An m ‐plane GaN layer with a thickness of approximately 500 μm was successfully obtained on a conventional m ‐plane sapphire substrate with a diameter of 2 inches. The GaN layer was grown by hydride vapor phase epitaxy (HVPE) on a buffer layer of low‐temperature (LT) GaN/Al 4 C 3 structure deposited on the sapphire substrate by metalorganic chemical vapor deposition (MOCVD). The deposition temperature of the Al 4 C 3 layer affected the appearance of the m ‐plane GaN layer. The c ‐axes of the GaN layer is parallel to the a ‐axis of the sapphire substrate. The thick GaN layer spontaneously separated from the sapphire substrate after its growth. Complete self‐separation of the m ‐plane GaN from the sapphire substrate was achieved with good reproducibility when the thickness of the Al 4 C 3 layer was 70–100 nm. By lapping and polishing the self‐separated GaN crystal, a freestanding m ‐plane GaN wafer with a diameter of 45 mm was obtained. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)