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Top‐down processed silicon nanowire transistor arrays for biosensing
Author(s) -
Vu Xuan Thang,
Eschermann Jan Felix,
Stockmann Regina,
GhoshMoulick Ranjita,
Offenhäusser Andreas,
Ingebrandt Sven
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200880475
Subject(s) - materials science , silicon , nanowire , silicon nanowires , subthreshold conduction , nanotechnology , fabrication , transistor , optoelectronics , lithography , biosensor , etching (microfabrication) , annealing (glass) , wafer , nanoimprint lithography , electrode , layer (electronics) , voltage , chemistry , electrical engineering , composite material , medicine , alternative medicine , engineering , pathology
Abstract We describe the fabrication, electrical and electrochemical characterization of silicon nanowire arrays, which were processed in a top‐down approach using combined nanoimprint lithography and wet chemical etching. We used the top silicon layer as contact line and observed an influence of implantation and subsequent annealing of these lines to the device performance. In addition we found a subthreshold slope dependence on wire size. When operated in a liquid environment, wires can be utilized as pH sensors. We characterized the pH sensitivity in the linear range and in the subthreshold operation regime. As a first proof‐of‐principle experiment for the later use of the sensors in bioassays, we monitored the buildup of polyelectrolyte multilayers on the wire surface. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)