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Auger recombination in silicon nanocrystals embedded in SiO 2 wide band‐gap lattice
Author(s) -
Mahdouani M.,
Bourguiga R.,
Jaziri S.,
Gardelis S.,
Nassiopoulou A. G.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200880223
Subject(s) - excited state , auger effect , nanocrystal , quantum dot , recombination , auger , atomic physics , silicon , electron , biexciton , materials science , lattice (music) , molecular physics , physics , chemistry , optoelectronics , nanotechnology , biochemistry , quantum mechanics , acoustics , gene
We calculate the ground and excited electron and hole levels in spherical Si nanocrystals (quantum dots) embedded within SiO 2 in a multiband effective mass approximation. The obtained energies of electron and hole are used to estimate the Auger Recombination (AR) lifetime in Si Nanocrystals (NCs). The excited electron, excited hole and biexciton AR types are considered. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)