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Electrical activity of doped phosphorus atoms in (001) n‐type diamond
Author(s) -
Kato Hiromitsu,
Takeuchi Daisuke,
Tokuda Norio,
Umezawa Hitoshi,
Yamasaki Satoshi,
Okushi Hideyo
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200879722
Subject(s) - diamond , schottky diode , doping , capacitance , rectification , phosphorus , diode , materials science , optoelectronics , chemistry , voltage , analytical chemistry (journal) , electrical engineering , electrode , metallurgy , chromatography , engineering
The electrical properties of (001) n‐type diamond were characterized by measuring the current voltage and capacitance voltage at different temperatures. Clear n‐type rectification characteristics were confirmed from Ti/n‐type diamond Schottky diodes. From the capacitance properties, the net donor density and Schottky barrier height were experimentally determined to be ∼5.4 × 10 17 cm –3 and ∼4.5 eV, respectively. The electrical activity of doped phosphorus atoms in (001) n‐type diamond is discussed in comparison with (111). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)