Electrical activity of doped phosphorus atoms in (001) n‐type diamond | Zendy

Kato Hiromitsu | Zendy; Takeuchi Daisuke | Zendy; Tokuda Norio | Zendy; Umezawa Hitoshi | Zendy; Yamasaki Satoshi | Zendy; Okushi Hideyo | Zendy

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Electrical activity of doped phosphorus atoms in (001) n‐type diamond

Author(s) -

Kato Hiromitsu,

Takeuchi Daisuke,

Tokuda Norio,

Umezawa Hitoshi,

Yamasaki Satoshi,

Okushi Hideyo

Publication year - 2008

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200879722

Subject(s) - diamond , schottky diode , doping , capacitance , rectification , phosphorus , diode , materials science , optoelectronics , chemistry , voltage , analytical chemistry (journal) , electrical engineering , electrode , metallurgy , chromatography , engineering

The electrical properties of (001) n‐type diamond were characterized by measuring the current voltage and capacitance voltage at different temperatures. Clear n‐type rectification characteristics were confirmed from Ti/n‐type diamond Schottky diodes. From the capacitance properties, the net donor density and Schottky barrier height were experimentally determined to be ∼5.4 × 10 17 cm –3 and ∼4.5 eV, respectively. The electrical activity of doped phosphorus atoms in (001) n‐type diamond is discussed in comparison with (111). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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