Premium
Compensation in boron‐doped CVD diamond
Author(s) -
Gabrysch Markus,
Majdi Saman,
Hallén Anders,
Linnarsson Margareta,
Schöner Adolf,
Twitchen Daniel,
Isberg Jan
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200879711
Subject(s) - diamond , boron , doping , dopant , acceptor , materials science , context (archaeology) , compensation (psychology) , hall effect , optoelectronics , chemical vapor deposition , schottky diode , analytical chemistry (journal) , crystal (programming language) , condensed matter physics , electrical engineering , chemistry , electrical resistivity and conductivity , metallurgy , physics , engineering , psychoanalysis , computer science , biology , psychology , paleontology , chromatography , programming language , organic chemistry , diode
Hall‐effect measurements on single crystal boron‐doped CVD diamond in the temperature interval 80–450 K are presented together with SIMS measurements of the dopant concentration. Capacitance–voltage measurements on rectifying Schottky junctions manufactured on the boron‐doped structures are also presented in this context. Evaluation of the compensating donor ( N D ) and acceptor concentrations ( N A ) show that in certain samples very low compensation ratios ( N D / N A below 10 –4 ) have been achieved. The influence of compensating donors on majority carrier transport and the significance for diamond device performance are briefly discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)