z-logo
Premium
Ion beam induced charge (IBIC) irradiation damage study in synthetic single crystal diamond using 2.6 MeV protons
Author(s) -
Lohstroh A.,
Sellin P. J.,
Gkoumas S.,
Parkin J.,
Veeramani P.,
Prekas G.,
Veale M. C.,
Morse J.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200879701
Subject(s) - proton , irradiation , beam (structure) , single crystal , diamond , ion , materials science , detector , radiation damage , ion beam , signal (programming language) , radiation , atomic physics , electric field , optics , amplitude , crystal (programming language) , physics , nuclear physics , nuclear magnetic resonance , quantum mechanics , computer science , composite material , programming language
We have studied the effects of irradiation induced damage on the detector response of a synthetic single crystal diamond radiation detector. Before introducing radiation damage, the spatial variation of the detector response was investigated using a highly focused 2.6 MeV proton beam. A very uniform response close to 100% charge collection efficiency (CCE) over the whole contact area was found at applied electric field strengths as low as 0.4 V μm –1 . At lower biases, time dependent polarisation phenomena were observed and clearly reduced the average signal amplitude. Subsequently, the 2.6 MeV proton beam has been used to introduce radiation damage within selected areas. The ion beam induced charge imaging was repeated to probe the modified regions. Even at an applied electric field of 2.6 V μm –1 , no signal above the analogue threshold of the system was observed in the areas which had received a dose larger then 5 × 10 14 cm –2 , whereas more than 90% CCE was reached in the area with 10 12 protons cm –2 . (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here