Schottky contacts to hydrogen doped ZnO | Zendy

Schifano R. | Zendy; Monakhov E. V. | Zendy; Christensen J. S. | Zendy; Kuznetsov A. Yu. | Zendy; Svensson B. G. | Zendy

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Schottky contacts to hydrogen doped ZnO

Author(s) -

Schifano R.,

Monakhov E. V.,

Christensen J. S.,

Kuznetsov A. Yu.,

Svensson B. G.

Publication year - 2008

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200878862

Subject(s) - wafer , annealing (glass) , doping , electrical resistivity and conductivity , materials science , charge carrier density , hydrogen , schottky diode , capacitance , analytical chemistry (journal) , chemistry , optoelectronics , electrode , electrical engineering , composite material , organic chemistry , diode , chromatography , engineering

High resistivity (≥1 kΩ cm) hydrothermally grown single crystal ZnO wafers were modified by hydrogen implantation. The implantation has been performed with multiple energies in order to form a box‐like profile with a depth of 4 μm and two different concentrations of 8 × 10 17 H/cm 3 and 1.5 × 10 18 H/ cm 3 . A subsequent annealing at 200 °C for 30 min in N 2 resulted in the formation of a highly conductive layer. Pd con‐ tacts deposited on the implanted side showed rectifying behaviour by up to three orders of magnitude. However by capacitance vs. voltage ( C – V ) technique a carrier concentration significantly lower than the one expected according to the implanted H content was measured suggesting the presence of a high density of compensating centers and/or an incomplete activation of H as a donor. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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