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The α‐particle excited scintillation response of YAG:Ce thin films grown by liquid phase epitaxy
Author(s) -
Prusa Petr,
Nikl Martin,
Mares Jiri A.,
Kucera Miroslav,
Nitsch Karel,
Beitlerova Alena
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200825050
Subject(s) - epitaxy , materials science , yield (engineering) , x ray photoelectron spectroscopy , analytical chemistry (journal) , thin film , phase (matter) , scintillation , excitation , crystal growth , particle (ecology) , optics , chemistry , crystallography , nanotechnology , nuclear magnetic resonance , metallurgy , physics , chromatography , oceanography , organic chemistry , layer (electronics) , detector , geology , quantum mechanics
Y 3 Al 5 O 12 :Ce (YAG:Ce) thin films were grown from PbO‐, BaO‐, and MoO 3 ‐based fluxes using the liquid phase epitaxy (LPE) method. Photoelectron yield, its time dependence within 0.5–10 μs shaping time, and energy resolution of these samples were measured under α‐particle excitation. For comparison a sample of the Czochralski grown bulk YAG:Ce single crystal was measured as well. Photoelectron yield values of samples grown from the BaO‐based flux were found superior to other LPE films and comparable with that of the bulk single crystal. The same is valid also for the time dependence of photoelectron yield. Obtained results are discussed taking into account the influence of the flux and technology used. Additionally, α particle energy deposition in very thin films is modelled and discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)