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Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal
Author(s) -
Czyszanowski Tomasz,
Sarzała Robert P.,
Dems Maciej,
Thienpont Hugo,
Nakwaski Włodzimierz,
Panajotov Krassimir
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824499
Subject(s) - vertical cavity surface emitting laser , materials science , photonic crystal , optoelectronics , diode , laser , transverse mode , photonics , optics , laser diode , transverse plane , aperture (computer memory) , thermal , physics , structural engineering , meteorology , acoustics , engineering
Abstract A self‐consistent electrical‐thermal‐optical‐gain modeling of threshold characteristics of an InP‐based 1300 nm AlInGaAs photonic‐crystal vertical‐cavity surface‐emitting diode laser is presented. It is shown that low threshold characteristics and strong transverse‐mode discrimination can be simultaneously achieved for optimized photonic crystal structure and current aperture. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)