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Optical output power‐dependent degradation mechanism of 445 nm InGaN blue laser
Author(s) -
Kim KyuSang,
Sung Y. J.,
Paek H. S.,
Lee S. N.,
Jang T.,
Son J. K.,
Park Y.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824490
Subject(s) - diode , laser , materials science , degradation (telecommunications) , slope efficiency , optoelectronics , wavelength , reliability (semiconductor) , laser diode , optics , power (physics) , blue laser , telecommunications , fiber laser , physics , quantum mechanics , computer science
The degradation characteristics of InGaN‐based blue laser diodes (LDs) are investigated at an emission wavelength of 445 nm. Two different LDs are used to determine the distinct failure characteristics with mirror reflectivities of 54% and 78%. Blue LDs are operated with the same current injection during a 1000 h reliability test. Each LD gives an output power of 100 mW and 50 mW at reflectivities of 54% and 78%, respectively. A slight threshold current increase is observed after 1000 h of aging at 50 mW, while the slope efficiency remains constant at its initial level before aging. At 100 mW, the slope efficiency (threshold current) increases 25% (100%) compared to values before aging. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)