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Faceting of twin grain boundaries in polysilicon films
Author(s) -
Nakhodkin Nikolay,
Kulish Nikolay,
Rodionova Tatyana
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824482
Subject(s) - faceting , materials science , annealing (glass) , grain boundary , condensed matter physics , transmission electron microscopy , facet (psychology) , crystal twinning , grain size , crystallography , chemical vapor deposition , nanotechnology , composite material , microstructure , chemistry , physics , psychology , social psychology , personality , big five personality traits
The faceting of grain boundaries (GB) under annealing in phosphorus‐doped polysilicon films, produced by low‐pressure chemical vapor deposition, has been investigated by transmission electron microscopy. It has been shown that the facet types and facet density depend on annealing temperature. It has been found that GB facets are generally parallel with close‐packed planes in coincidence site lattice. A correlation between GB faceting and grain‐growth mechanisms has been considered. It has been shown that faceting takes place both under normal and abnormal grain growth. It is revealed that twinning plays the key role for GB faceting under normal grain growth.