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Growth of β‐Ga 2 O 3 on Al 2 O 3 and GaAs using metal‐organic vapor‐phase epitaxy
Author(s) -
Gottschalch Volker,
Mergenthaler Kilian,
Wagner Gerald,
Bauer Jens,
Paetzelt Hendrik,
Sturm Chris,
Teschner Ulrike
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824436
Subject(s) - epitaxy , triethylgallium , sapphire , metalorganic vapour phase epitaxy , monoclinic crystal system , analytical chemistry (journal) , gallium , materials science , transmission electron microscopy , crystallography , thin film , chemistry , layer (electronics) , crystal structure , optics , nanotechnology , metallurgy , laser , chromatography , physics
Epitaxial layers of monoclinic β‐Ga 2 O 3 were successfully grown on (0001) sapphire and ( $ \bar 1 $ 11) As GaAs substrates using metal‐organic vapor‐phase epitaxy (MOVPE). Triethylgallium (TEGa) and N 2 O were used as precursors for gallium and oxygen, respectively. Growth conditions could be determined, where β‐Ga 2 O 3 grows epitaxially on c ‐plane sapphire and ( $ \bar 1 $ 11) As GaAs substrates. X‐ray diffraction (XRD) and transmission electron microscopy (TEM) measurements identify a epitaxial relationship with ( $ \bar 2 $ 01) β‐Ga 2 O 3 || (0001) sapphire and ( $ \bar 2 $ 01) β‐Ga 2 O 3 || ( $ \bar 1 $ 11) As GaAs. The observed sixfold rotational in‐plane symmetry results from differently oriented rotational domains of monoclinic β‐Ga 2 O 3 with twofold symmetry. Thin films deposited on substrates of other orientation show the formation of the low‐temperature modification α‐Ga 2 O 3 . Optical transmission spectra measured in the spectral range from 200 nm to 2000 nm show a well‐distinct absorption edge at about 5 eV for layers grown on c ‐ and a ‐plane sapphire. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)