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Magnetic field dependences of galvanomagnetic properties of polycrystalline Bi–Sb solid solutions
Author(s) -
Rogacheva E. I.,
Drozdova A. A.,
Izhnin I. I.,
Dresselhaus M. S.
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824430
Subject(s) - condensed matter physics , magnetoresistance , crystallite , magnetic field , hall effect , solid solution , semimetal , materials science , chemistry , physics , band gap , crystallography , quantum mechanics , metallurgy
The dependences of the Hall coefficient R H and magnetoresistance Δ ρ / ρ on magnetic field ( B = 0.01–1.0 T) for polycrystalline Bi–Sb solid solutions with various Sb concentrations (0–15 at% Sb) were obtained at 77 K and 300 K. On the basis of the R H ( B ) and Δ ρ / ρ ( B ) dependences, the values of magnetic field B c corresponding to the boundary of the region characterized by a constancy of R H and a quadratic dependence of Δ ρ / ρ ( B ), i.e. satisfying the criterion of weak magnetic field behavior, were determined. It was established that a decrease in temperature leads to a shift of the critical values B c to smaller magnetic fields. It was shown that the dependence of B c on composition of Bi–Sb solid solutions exhibits a non‐monotonic behavior: in the vicinity of ∼3 at% Sb and ∼8 at% Sb, where distinct minima are observed. The appearance of the minima was attributed to a sharp increase in the charge carrier mobility at the mentioned Sb concentrations due to the transition to a gapless state accompanied by the band inversion, and to the semimetal–semiconductor transition, respectively. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)