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ZnO nanowire field‐effect transistor as a UV photodetector; optimization for maximum sensitivity
Author(s) -
Kim Woong,
Chu Kyo Seon
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824338
Subject(s) - photodetection , photodetector , nanowire , optoelectronics , sensitivity (control systems) , materials science , transistor , field effect transistor , subthreshold swing , threshold voltage , subthreshold conduction , detector , voltage , physics , optics , electronic engineering , engineering , quantum mechanics
We demonstrate that drain–source ( V ds ) and gate–source voltages ( V gs ) of a zinc oxide nanowire (ZnO NW) field‐effect transistor (FET) can be optimized to increase UV photodetection sensitivity. Investigation of the relationship between the sensitivity and the applied voltages reveals that the photodetector is most sensitive when it operates (1) with highest on/off current ratio and (2) at the “bottom” of the subthreshold swing region. Our results can be broadly applied to maximize sensitivity of other FET‐based sensors and detectors. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)