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High‐dielectric‐constant hafnium silicate insulator for low‐voltage pentacene field‐effect transistors
Author(s) -
Yan Hu,
Kagata Tsubasa,
Arima Susumu,
Sato Hiroshi,
Okuzaki Hidenori
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824297
Subject(s) - materials science , dielectric , pentacene , high κ dielectric , hafnium , amorphous solid , gate dielectric , analytical chemistry (journal) , optoelectronics , electron mobility , doping , wafer , x ray photoelectron spectroscopy , thin film transistor , transistor , zirconium , voltage , layer (electronics) , nanotechnology , electrical engineering , chemistry , nuclear magnetic resonance , crystallography , physics , engineering , metallurgy , chromatography
We prepared HfSiO x on a heavily doped n‐type silicon wafer by sputtering of a HfSi (50:50 at%) target using Ar:N 2 :O 2 as carrier gas. The HfSiO x layer thus prepared was characterized by XPS, XRD, STEM and C – F measurements, indicating that the layer mainly consisted of 100 nm thick amorphous HfSiO 5 with a dielectric constant ϵ r = 7.7. The leakage current density was 1 nA/cm 2 at an electric field of 2 MV/cm. We first fabricated top‐contact pentacene FETs using the high dielectric constant hafnium silicate as an insulator, coupled with a polymer microfiber‐based channel patterning technique. The pentacene FET showed well‐saturated output characteristics at low driving voltages, i.e. V D = –10 V and V G = –10 V, and hole mobility of 0.02 cm 2 /V s and on/off current ratio of 2600. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)