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In‐situ boron doping of chemical‐bath deposited CdS thin films
Author(s) -
Khallaf Hani,
Chai Guangyu,
Lupan Oleg,
Chow Lee,
Heinrich Helge,
Park S.,
Schulte Alfons
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824290
Subject(s) - doping , raman spectroscopy , chemical bath deposition , boron , materials science , chemical vapor deposition , annealing (glass) , thin film , analytical chemistry (journal) , band gap , transmission electron microscopy , crystal structure , nanotechnology , crystallography , chemistry , optoelectronics , optics , metallurgy , physics , organic chemistry , chromatography
In‐situ boron doping of CdS using chemical‐bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present a successful approach towards B doping of CdS using CBD, where a resistivity as low as 1.7 × 10 –2 Ω cm and a carrier density as high as 1.91 × 10 19 cm –3 were achieved. The bandgap of B‐doped films was found to slightly decrease as the [B]/[Cd] ratio in the solution increases. X‐ray diffraction studies showed B 3+ ions likely enter the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by micro‐Raman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were unaffected by B doping. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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