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Large effect of the deformation on magnetoresistance of stretched and compressed thin polycrystalline Bi films
Author(s) -
Tolutis Rimantas Aleksandras,
Balevičius Saulius
Publication year - 2009
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824275
Subject(s) - crystallite , condensed matter physics , materials science , magnetoresistance , substrate (aquarium) , deformation (meteorology) , thin film , composite material , electrical resistivity and conductivity , magnetic field , nanotechnology , metallurgy , electrical engineering , physics , oceanography , geology , engineering , quantum mechanics
Substantial influence of uniaxial stretch S and compression P on resistivity ρ and magnetoresistance (MR) of high‐quality polycrystalline Bi films consisting of up to 200 μm length crystallites was observed. The investigated 1.5 μm thick films were deposited on non‐crystalline substrate and annealed at critical temperature close to the film melting temperature. The experimental results are interpreted on the basis of improved polycrystalline Bi thin film model, including the electron intervalley repopulation in deformed film crystallites. It was found that S and P cause different dependence of ρ and MR on the magnetic field strength. The effect of P on ρ and MR is of opposite sign as compared to S and is larger than that for S . In a strong non‐quantizing magnetic field region the transverse ρ appeared to be independent of the deformation. The calculations show that in n‐Bi films the effect of P on ρ at 77 K can be many times larger because the T‐holes in Bi films significantly reduce the effect of deformation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)