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MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode
Author(s) -
Jamil Muhammad,
Zhao Hongping,
Higgins John B.,
Tansu Nelson
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824136
Subject(s) - metalorganic vapour phase epitaxy , photoluminescence , sapphire , materials science , epitaxy , optoelectronics , luminescence , band gap , context (archaeology) , analytical chemistry (journal) , optics , nanotechnology , chemistry , laser , layer (electronics) , physics , paleontology , chromatography , biology
This paper reports the metalorganic vapor phase epitaxy (MOVPE) of InN on GaN/sapphire templates by pulsed growth mode. Photoluminescence analysis of the films has been performed both at room temperature ( T = 300 K) and low temperature ( T = 77 K). At room temperature, the band gap of InN is measured as 0.77 eV which is observed to have strong dependence on the growth temperature of the film. The appearance of otherwise less dominant transitions is associated to defects related luminescence from the films grown at relatively low growth temperatures. The electron mobility of 681 cm 2 /(V s) is obtained for InN alloy grown under optimal condition. The X‐ray diffraction (XRD) analysis, structural quality and the evolution of the surface morphology of thin InN films have also been studied in the context of the given growth conditions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)