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Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga 4 Se 3 S layered crystals by Hall effect measurements
Author(s) -
Qasrawi A. F.,
Gasanly N. M.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824105
Subject(s) - hall effect , acceptor , effective mass (spring–mass system) , electron mobility , impurity , electrical resistivity and conductivity , condensed matter physics , anisotropy , crystal (programming language) , charge carrier , scattering , charge carrier density , analytical chemistry (journal) , materials science , chemistry , doping , physics , optics , organic chemistry , quantum mechanics , chromatography , computer science , programming language
In this work, the dark electrical resistivity, charge carriers density and Hall mobility of Ga 4 Se 3 S single crystals have been measured and analyzed in the temperature region of 200–350 K. The data analyses have shown that this crystal exhibits an extrinsic n‐type of conduction. The temperature‐dependent dark electrical resistivity analysis reflected the existence of energy level as 0.31 eV. The temperature dependence of carrier density was analyzed by using the single donor‐single acceptor model. The latter analysis allowed the determination of electron effective mass as 0.38 m 0 , hole effective mass as 0.42 m 0 , donor impurity energy level as 0.45 eV, acceptor–donor concentration ratio ( N a / N d ) as 0.97 and a donor–acceptor concentration difference as N d – N a = 1.5 × 10 11 cm –3 . The Hall mobility of Ga 4 Se 3 S is found to increase with decreasing temperature following a power law of slope of ∼(–6.3). The abnormal behavior of mobility was attributed to the domination of phonon scattering and/or crystals anisotropy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)