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Interdiffusion in SiGe alloys with Ge contents of 25% and 50% studied by X‐ray reflectivity
Author(s) -
Medunˇa M.,
Novák J.,
Bauer G.,
Falub C. V.,
Grützmacher D.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200824085
Subject(s) - annealing (glass) , specular reflection , molecular beam epitaxy , materials science , in situ , reflectivity , germanium , silicon , strain (injury) , x ray reflectivity , crystallography , analytical chemistry (journal) , epitaxy , optoelectronics , thin film , optics , chemistry , nanotechnology , metallurgy , layer (electronics) , physics , organic chemistry , chromatography , medicine
The interdiffusion in SiGe alloys has been studied by X‐ray specular reflectivity using ex‐situ and in‐situ annealing experiments. We report on the evolution of the Ge profile of strain‐compensated Si/SiGe multilayers due to high temperature annealing. These multilayers were grown pseudomorphically and strain‐symmetrized on relaxed Si 0.75 Ge 0.25 and Si 0.5 Ge 0.5 pseudosubstrates by molecular beam epitaxy at 330 °C. The multilayer structures were annealed at several temperatures around 590 °C and around 800 °C. From modelling the X‐ray specular reflectivity scans at various stages of the interdiffused structures, we obtained interdiffusion coefficients resulting in the activation energy and the prefactor for interdiffusion corresponding to Si 0.75 Ge 0.25 and Si 0.5 Ge 0.5 . The results obtained ex‐situ for Si 0.5 Ge 0.5 and in‐situ for Si 0.75 Ge 0.25 provide accurate values of diffusion parameters. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)