Effect of oxygen partial pressure on optical and electrical properties of co‐sputtered amorphous zinc indium tin oxide thin films | Zendy

Saji K. J. | Zendy; Jayaraj M. K. | Zendy

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Effect of oxygen partial pressure on optical and electrical properties of co‐sputtered amorphous zinc indium tin oxide thin films

Author(s) -

Saji K. J.,

Jayaraj M. K.

Publication year - 2008

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200824007

Subject(s) - amorphous solid , partial pressure , indium tin oxide , zinc , materials science , indium , thin film , electrical resistivity and conductivity , tin , sputtering , oxygen , conductivity , band gap , analytical chemistry (journal) , oxide , electron mobility , inorganic chemistry , chemistry , metallurgy , nanotechnology , optoelectronics , crystallography , organic chemistry , engineering , chromatography , electrical engineering

Transparent thin films of amorphous zinc indium tin oxide were prepared at room temperature by co‐sputtering of zinc oxide and indium tin oxide. Effect of oxygen partial pressure on the optical and electrical properties of amorphous zinc indium tin oxide thin films were investigated. Conductivity, carrier concentration and Hall mobility showed strong dependence on the oxygen partial pressure and these parameters decreased with the increase of oxygen pressure. The effect of subgap states caused a sharp difference in measured optical band gap values between the films deposited with and without oxygen partial pressure. Carrier transport studies were carried out by temperature dependent conductivity measurements. At low electron density, the conductivity showed thermally activated behaviour and at higher carrier concentrations it changed to almost degenerate band conduction. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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