Premium
Cr/4H‐SiC Schottky contacts investigated by electrical and photoelectron spectroscopy techniques
Author(s) -
Koliakoudakis C.,
Dontas J.,
Karakalos S.,
Kayambaki M.,
Ladas S.,
Konstantinidis G.,
Zekentes K.,
Kennou S.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200780212
Subject(s) - x ray photoelectron spectroscopy , schottky barrier , annealing (glass) , schottky diode , materials science , analytical chemistry (journal) , semiconductor , spectroscopy , metal , chemistry , optoelectronics , nuclear magnetic resonance , metallurgy , physics , diode , chromatography , quantum mechanics
Cr/4H‐SiC Schottky contacts were investigated by standard electrical measurements and photoelectron spectroscopy. XPS (X‐ray Photoelectron Spectroscopy) measurements were performed during the in‐situ formation of the metal‐semiconductor interface formation as well as after several annealing steps of the Cr/4H‐SiC contact. A barrier height of 1.2 eV was determined from XPS measurements. The electrical measurements have showed the necessity of thermal annealing at 600 °C to obtain best performance (Φ B = 1.05 eV from C‐V measurements and 0.94 eV from I‐V measurements with ideality factor n = 1.08). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)