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Low energy loss rf circuits on nanostructured porous silicon layers
Author(s) -
Porcher A.,
Remaki B.,
Malhaire C.,
Barbier D.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200780130
Subject(s) - materials science , electronic circuit , substrate (aquarium) , silicon , porous silicon , conductivity , radio frequency , planar , optoelectronics , porosity , layer (electronics) , nanotechnology , electrical engineering , composite material , chemistry , computer science , engineering , oceanography , computer graphics (images) , geology
We present a work dealing with the study of thick porous silicon (PS) as insulating substrate for radio frequency (rf) circuits. Planar LC resonant circuits of 2 mm x 2 mm were designed on 100 µm thick PS layers for uses in 10 MHz to 1 GHz frequency range. The influence of PS electrical conductivity on the energy loss is determined using an original method based on experimental data combined with numerical simulations. We have clearly shown the increase of PS conductivity with the frequency due to hopping transport mechanisms in disordered materials. The contribution of the porous substrate to the energy loss is dominant for conductivities higher than 10 –3 S/cm. Finally, the insertion of a SiO 2 layer between an oxidized porous substrate and the integrated micro‐coil is suggested to optimize the quality factor of integrated rf resonnant circuits. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)