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Simultaneous electro‐thermal experimental analysis of RF‐MEMS switches for high microwave power handling
Author(s) -
Coccetti F.,
Plana R.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200780101
Subject(s) - microelectromechanical systems , microwave , radio frequency , rf power amplifier , ohmic contact , thermal , rf switch , electrical engineering , materials science , monolithic microwave integrated circuit , power (physics) , electronic engineering , optoelectronics , engineering , telecommunications , physics , nanotechnology , amplifier , cmos , layer (electronics) , quantum mechanics , meteorology
An experimental setup for the characterization of electromagnetically induced heat on MEMS devices operating in high RF power regimes (> 5 W) is here proposed. The technique is based on infrared (IR) imaging of on‐probe DUT, in working conditions. The present work focuses on switches. Undoubtedly the switch represents the most emblematic and strategic component across the RF‐MEMS device portfolio. The capacitive ones can withstand more RF power with respect to DC contact (or ohmic) counterparts. Here, both serial and shunt configurations will be considered in the two working states (ON‐OFF). The approach presented here is based on a non‐intrusive real‐time IR imaging method capable to provide high resolution thermal maps and thermal transients of DUTs undertaking up to 6.3 W of CW incident power at 10 GHz. This technique represents a very powerful approach toward design optimization on the one hand and fast testing and product quality assessment against RF induced failures in production line for integrated RF MEMS and MMIC front‐end. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)