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The role of source and drain material in the performance of GIZO based thin‐film transistors
Author(s) -
Barquinha P.,
Vilà A.,
Gonçalves G.,
Pereira L.,
Martins R.,
Morante J.,
Fortunato E.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200778940
Subject(s) - thin film transistor , materials science , contact resistance , optoelectronics , indium tin oxide , transistor , electrode , indium , semiconductor , oxide , threshold voltage , layer (electronics) , nanotechnology , voltage , electrical engineering , metallurgy , chemistry , engineering
Indium tin oxide (ITO) has been used as the prefered electrode material for the emerging area of transparent electronics, namely for thin‐film transistors (TFTs) based on oxide semiconductors. This work pretends to investigate different materials to replace ITO in inverted‐staggered TFTs based on gallium–indium–zinc oxide (GIZO), one of the most promissing oxide semiconductors for TFTs. The analyzed electrode materials are indium–zinc oxide (IZO), Ti, Mo and Ti/Au. Devices are analyzed with special focus on the contact resistance fundamentals, including the extraction of source/ drain series resistances and TFTs intrinsic parameters, such as intrinsic mobility ( µ i ) and intrinsic threshold voltage ( V Ti ). The obtained contact resistance values are between 10 kΩ and 20 kΩ, and the best devices have field effect mobility ( µ FE ) close to 25 cm 2 /V s and on/off ratio close to 10 8 . (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)