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Amorphous Sn–Ga–Zn–O channel thin‐film transistors
Author(s) -
Ogo Youichi,
Nomura Kenji,
Yanagi Hiroshi,
Kamiya Toshio,
Hirano Masahiro,
Hosono Hideo
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200778908
Subject(s) - thin film transistor , materials science , amorphous solid , optoelectronics , fabrication , wafer , transistor , channel (broadcasting) , nanotechnology , electrical engineering , layer (electronics) , voltage , crystallography , chemistry , medicine , alternative medicine , engineering , pathology
Transparent amorphous oxide semiconductors (TAOS) such as a‐InGaZnO 4 are expected to be applied for channels of low‐temperature high‐mobility thin‐film transistors (TFTs). This paper presents the fabrication and characteristics of amorphous Sn–Ga–Zn–O (a‐SGZO) channel TFTs. Bottom‐gate TFTs were fabricated using as‐deposited and annealed a‐SGZO channels on a‐SiO 2 /n + ‐Si wafers. Contrary to a‐InGaZnO 4 channel TFTs, the device performances of the as‐deposited channel TFTs were very poor, e.g., on‐currents ( I on ) were <10 –7 A and on/off current ratios ( R on/off ) were <10 1 . The TFTs using channels annealed at 500 °C showed good performances such as I on > 10 –5 A, R on/off > 10 6 and μ sat ∼ 1.8 cm 2 V –1 s –1 . Optical measurements indicate that the improvement is accompanied by a reduction of the density of subgap states. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)