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Studies of structural and optical properties of Cu–In–O thin films
Author(s) -
Khemiri N.,
Chaffar Akkari F.,
Kanzari M.,
Rezig B.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200778897
Subject(s) - annealing (glass) , materials science , electrical resistivity and conductivity , analytical chemistry (journal) , scanning electron microscope , thin film , transmittance , band gap , semiconductor , diffraction , optics , chemistry , nanotechnology , optoelectronics , metallurgy , composite material , physics , chromatography , electrical engineering , engineering
We report in this paper the preparation and characterization of Cu–In–O films. The samples were prepared by an annealing at 200 °C for 2 h in vacuum followed by an annealing at 400 °C for 3 h in air atmosphere (sample A) and directly by an annealing at 400 °C for 3 h in air atmosphere (sample B). The films were characterized for their structural, surface morphological, compositional, electrical and optical properties by using X‐ray diffraction (XRD), scanning electron microscopy, electrical conductivity and optical measurement techniques (transmittance and reflectance). The XRD patterns revealed the presence of CuO and In 2 O 3 phases. The absorption coefficients of Cu–In–O thin films in both cases are in the range (10 4 –10 5 ) cm –1 and the direct optical band gaps are 3 eV and 3.55 eV for the samples B and A, respectively. The electrical measurements show a conversion from a metallic phase to a semiconductor phase. n‐type conductivity was found for the sample B, whereas the sample A was highly resistive. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)