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Electrical and optical properties of transparent oxide semiconductors (TOSs) based on Eu,Pd‐ and Tb,Pd‐doped TiO 2
Author(s) -
Domaradzki J.,
Kaczmarek D.,
Borkowska A.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200778872
Subject(s) - materials science , dopant , thin film , heterojunction , doping , optoelectronics , oxide , sputter deposition , nanocrystalline material , sputtering , nanotechnology , metallurgy
Transparent oxide semiconductors (TOSs) with specified type of electrical conduction allow fabrication of different kind of heterojunctions. Thin oxide films were deposited by modified low‐pressure hot‐target magnetron sputtering from metallic Ti–Eu–Pd and Ti–Tb–Pd mosaic targets on silicon wafers and glass substrates. XRD studies revealed a dominant TiO 2 ‐rutile phase and a highly ordered nanocrystalline structure of the prepared thin films. Optical transmission measurements showed that Eu, Pd and Tb, Pd doping shifts the fundamental absorption edge of TiO 2 to longer wavelength. Electrical properties were examined using current–voltage ( I – V ) measurements. Eu dopant results in n‐type and Tb dopant in p‐type electrical conduction of the prepared thin films. From I – V measurements a strong nonlinear (diode‐like) behavior was found and thus the formation of heterojunction at the interface of thin‐film silicon was confirmed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)