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Hydrogen‐assisted nitrogen‐acceptor doping in ZnO
Author(s) -
Lu J. G.,
Fujita S.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200778867
Subject(s) - crystallinity , annealing (glass) , electrical resistivity and conductivity , materials science , doping , acceptor , chemical vapor deposition , impurity , hydrogen , conductivity , analytical chemistry (journal) , band gap , absorption edge , nitrogen , thin film , chemical engineering , nanotechnology , metallurgy , chemistry , optoelectronics , composite material , physics , organic chemistry , condensed matter physics , electrical engineering , engineering , chromatography
N‐doped ZnO (ZnO:N) thin films were prepared by atmospheric pressure mist chemical vapor deposition. The as‐grown ZnO:N film was of high resistivity with ambiguous carrier type, while the annealed sample showed p‐type conductivity with a resistivity of 22.3 Ω cm and hole concentration of 5.49 × 10 17 cm –3 . The crystallinity of ZnO films was improved by the annealing treatment. Unintentionally H impurities introduced into the as‐grown film could be annealed out and a near‐edge absorption related to the N states in band gap was present in the annealed sample, which was indicative of the appearance of activated N in ZnO during the annealing process. A hydrogen‐assisted nitrogen‐acceptor doping mechanism was proposed to explain the observation of p‐type ZnO. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)