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Effect of O 2 partial pressure and substrate temperature on the plasma emission spectra and ZnO growth behavior
Author(s) -
Liu M.,
Ma C. Y.,
Zhang Q. Y.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200778316
Subject(s) - sputtering , analytical chemistry (journal) , partial pressure , stoichiometry , substrate (aquarium) , oxygen , emission spectrum , materials science , sputter deposition , plasma , spectral line , thin film , chemistry , nanotechnology , oceanography , physics , organic chemistry , chromatography , quantum mechanics , astronomy , geology
An on‐line measurement of optical emission spectrum (OES) was used to study the variation of Zn and O components in the plasma of ZnO film growth with reactive radio‐frequency magnetron sputtering method. It was found that the decline of all the Zn emission lines shows three different stages with the increase of oxygen partial pressure ( P O ), corresponding to metal sputtering ( P O < 6.0 × 10 –3 Pa), the compound sputtering ( P O > 5.0 × 10 –2 Pa), and the transition range (6.0 × 10 –3 Pa to 5.0 × 10 –2 Pa), respectively. In the stage of compound sputtering, a critical oxygen pressure is found at about 1.5 × 10 –1 Pa. At the oxygen pressures below and above the critical pressure, the film growth is found to be O‐controlled and Zn‐controlled, respectively. Similarly, a critical substrate temperature is found at about 550 °C. At the temperatures above the critical temperature, the variation of Zn 472.6 intensity is more obvious, suggesting the deposited films is more close to the stoichiometric ratio than the films deposited at the lower temperatures. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)