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Innovative process flow to achieve carbon nanotube based interconnects
Author(s) -
Coiffic J. C.,
Fayolle M.,
Faucherand P.,
Levis M.,
Poche H. Le,
Dijon J.,
Maitrejean S.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200778173
Subject(s) - carbon nanotube , copper interconnect , wafer , interconnection , materials science , nanotube , nanotechnology , carbon nanotube field effect transistor , optoelectronics , flow resistance , dual (grammatical number) , silicon , flow (mathematics) , electrical engineering , computer science , transistor , engineering , field effect transistor , voltage , physics , art , literature , computer network , mechanics , layer (electronics)
We have achieved down to 140 nm diameter carbon nanotube via interconnects with both new single and dual damascene processes on 200 mm silicon wafers. High density 5 × 10 10 nanotube/cm 2 is obtained. The validity of these two new processes has been checked by performing electrical measurements. At high bias, a low resistance of 20 Ω has been reached for a 300 nm diameter via interconnect. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)