Innovative process flow to achieve carbon nanotube based interconnects | Zendy

Coiffic J. C. | Zendy; Fayolle M. | Zendy; Faucherand P. | Zendy; Levis M. | Zendy; Poche H. Le | Zendy; Dijon J. | Zendy; Maitrejean S. | Zendy

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Innovative process flow to achieve carbon nanotube based interconnects

Author(s) -

Coiffic J. C.,

Fayolle M.,

Faucherand P.,

Levis M.,

Poche H. Le,

Dijon J.,

Maitrejean S.

Publication year - 2008

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200778173

Subject(s) - carbon nanotube , copper interconnect , wafer , interconnection , materials science , nanotube , nanotechnology , carbon nanotube field effect transistor , optoelectronics , flow resistance , dual (grammatical number) , silicon , flow (mathematics) , electrical engineering , computer science , transistor , engineering , field effect transistor , voltage , physics , art , literature , computer network , mechanics , layer (electronics)

We have achieved down to 140 nm diameter carbon nanotube via interconnects with both new single and dual damascene processes on 200 mm silicon wafers. High density 5 × 10 10 nanotube/cm 2 is obtained. The validity of these two new processes has been checked by performing electrical measurements. At high bias, a low resistance of 20 Ω has been reached for a 300 nm diameter via interconnect. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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