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Transition from thin gold layers to nano‐islands on TCO for catalyzing the growth of one‐dimensional nanostructures
Author(s) -
Alet PierreJean,
Eude Laurent,
Palacin Serge,
Cabarrocas Pere Roca i
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200778158
Subject(s) - ostwald ripening , annealing (glass) , nanowire , materials science , nanostructure , silicon , nanotechnology , oxide , thin film , chemical engineering , chemical physics , optoelectronics , chemistry , composite material , metallurgy , engineering
The formation of gold islands on a transparent conductive oxide by annealing a thin evaporated layer is studied by SEM. The droplets of metal formed this way may catalyze the growth of nanowires or nanotubes to be used in opto‐electronic devices. The effect of the initial thickness (between 1 nm and 4 nm) and the annealing temperature (between 70 °C and 650 °C) is investigated. A qualitative description of the evolution is given and quantitative data are obtained by automated image analysis. Number density, area and effective diameter of the aggregates depend heavily on the initial thickness but very slightly on the annealing temperature. Three phenomena are considered to explain the evolution: interfacial stress due to mismatch in the linear expansion coefficient, Ostwald ripening and kinetic aggregation. By comparing the experimental size distributions to the theoretical ones, the relevance of the last two is discussed. As an application, the gold catalyzed CVD growth of silicon nanowires on zinc oxide is demonstrated. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)