Premium
Si–SiO 2 interface band‐gap transition – effects on MOS inversion layer
Author(s) -
Markov Stanislav,
Sushko Peter V.,
Roy Scott,
Fiegna Claudio,
Sangiorgi Enrico,
Shluger Alexander L.,
Asenov Asen
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200778154
Subject(s) - quantum tunnelling , oxide , density functional theory , band gap , materials science , ab initio , condensed matter physics , capacitance , band offset , electronic band structure , semiconductor , optoelectronics , computational physics , chemistry , computational chemistry , physics , quantum mechanics , valence band , electrode , metallurgy
Density functional theory simulation results of the atomic structure at the Si–SiO 2 interface implies a non‐abrupt transition of the band‐gap within the oxide. The depth of the transition, 2–6 Å, is comparable to the approximately 1 nm oxide thickness in nano‐CMOS devices, and is expected to affect their characteristics. Using hierarchical simulation approach, we combine for the first time ab‐initio density functional theory simulations of the interface, with self‐consistent Poisson–Schrödinger one‐dimensional device simulations, and estimate the impact of interface band‐gap transition on the inversion layer quantisation, capacitance, and tunnelling characteristics of a metal–oxide–semiconductor structure. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)