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Analysis of Si 1– x Ge x :H thin films with graded composition and structure by real time spectroscopic ellipsometry
Author(s) -
Podraza N. J.,
Li Jing,
Wronski C. R.,
Dickey E. C.,
Horn M. W.,
Collins R. W.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200777876
Subject(s) - microcrystalline , ellipsometry , thin film , materials science , amorphous solid , nucleation , germanium , analytical chemistry (journal) , chemical vapor deposition , phase (matter) , silicon , plasma enhanced chemical vapor deposition , layer (electronics) , alloy , crystallography , chemistry , optoelectronics , nanotechnology , metallurgy , organic chemistry , chromatography
Silicon‐germanium (Si 1− x Ge x :H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH 4 and GeH 4 and measured during growth using real time spectroscopic ellipsometry. A two‐layer virtual interface analysis has been applied to study the structural evolution of Si 1− x Ge x :H films that initially nucleate in the amorphous (a) phase, but evolve to the microcrystalline (μc) phase with accumulated thickness. The compositional evolution of alloy‐graded a‐Si 1− x Ge x :H has been studied as well using similar methods. Both types of films are of interest for Si‐based photovoltaic devices. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)