Analysis of Si 1– x   Ge  x  :H thin films with graded composition and structure by real time spectroscopic ellipsometry | Zendy

Podraza N. J. | Zendy; Li Jing | Zendy; Wronski C. R. | Zendy; Dickey E. C. | Zendy; Horn M. W. | Zendy; Collins R. W. | Zendy

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Analysis of Si 1– x Ge x :H thin films with graded composition and structure by real time spectroscopic ellipsometry

Author(s) -

Podraza N. J.,

Li Jing,

Wronski C. R.,

Dickey E. C.,

Horn M. W.,

Collins R. W.

Publication year - 2008

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200777876

Subject(s) - microcrystalline , ellipsometry , thin film , materials science , amorphous solid , nucleation , germanium , analytical chemistry (journal) , chemical vapor deposition , phase (matter) , silicon , plasma enhanced chemical vapor deposition , layer (electronics) , alloy , crystallography , chemistry , optoelectronics , nanotechnology , metallurgy , organic chemistry , chromatography

Silicon‐germanium (Si 1− x Ge x :H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH 4 and GeH 4 and measured during growth using real time spectroscopic ellipsometry. A two‐layer virtual interface analysis has been applied to study the structural evolution of Si 1− x Ge x :H films that initially nucleate in the amorphous (a) phase, but evolve to the microcrystalline (μc) phase with accumulated thickness. The compositional evolution of alloy‐graded a‐Si 1− x Ge x :H has been studied as well using similar methods. Both types of films are of interest for Si‐based photovoltaic devices. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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