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Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals
Author(s) -
Alonso M. I.,
Garriga M.,
Bernardi A.,
Goñi A. R.,
Lopeandia A. F.,
Garcia G.,
RodríguezViejo J.,
Lábár J. L.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200777851
Subject(s) - nanocrystal , crystallization , amorphous solid , annealing (glass) , materials science , quantum dot , germanium , dielectric , condensed matter physics , potential well , germanium compounds , nanotechnology , optoelectronics , crystallography , chemistry , physics , thermodynamics , silicon , composite material
We studied the dielectric functions of Ge nanocrystals obtained by crystallization of amorphous Ge thin films embedded in SiO 2 . Partial crystallization of films was induced by thermal annealing. Crystalline regions gave rise to clear spectral features due to interband transitions whose critical point parameters correlated with the initial a‐Ge thickness. These changes were clearly attributed to quantum confinement effects. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)