Premium
Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420–510 nm
Author(s) -
Arif Ronald A.,
Ee YikKhoon,
Tansu Nelson
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200777478
Subject(s) - quantum well , light emitting diode , optoelectronics , metalorganic vapour phase epitaxy , photoluminescence , materials science , chemical vapor deposition , diode , spontaneous emission , nanostructure , optics , laser , physics , nanotechnology , epitaxy , layer (electronics)
We demonstrated staggered InGaN quantum wells (QW) grown by metalorganic chemical vapor deposition (MOCVD) as improved active region for visible light emitters. Theoretical studies indicate that staggered InGaN QW with step‐function like In‐content in the well offers significantly improved radiative recombination rate and optical gain, in comparison to the conventional InGaN QW. Experimental results of light emitting diode (LED) structure utilizing staggered InGaN QW show good agreement with theory. Staggered InGaN QW allows polarization engineering leading to improvement of photoluminescence intensity and LEDs output power as a result of enhanced radiative recombination rate. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)