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Annealing experiments of the GaP based dilute nitride Ga(NAsP)
Author(s) -
Kunert B.,
Trusheim D.,
Voßebürger V.,
Volz K.,
Stolz W.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200777476
Subject(s) - photoluminescence , annealing (glass) , materials science , heterojunction , blueshift , diffraction , nitride , optoelectronics , line width , band gap , analytical chemistry (journal) , optics , chemistry , nanotechnology , composite material , physics , layer (electronics) , chromatography
The post‐growth annealing behaviour of Ga(NAsP) multi quantum well heterostructures (MQWHs) grown pseudomorphically strained to GaP substrate has been investigated. The optical properties as well as the structural crystal quality of the novel dilute nitride show an obvious dependence on the applied annealing temperature. Photoluminescence (PL) measurements reveal a step‐like blue shift of the PL peak position in line with an increase of PL intensity with rising annealing temperature. The PL line width decreases to a mini‐ mal value for an optimized heating temperature around 800 °C. This annealing behaviour of the Ga(NAsP)/GaP‐MQWHs up to 850 °C is quite typical for a dilute nitride, however, the functional dependence of the integrated intensity above 850 °C is unusual. The increase of the PL line width above 850 °C suggests a deterioration of the crystalline MQW quality, but transmission electron microscopy (TEM) and high resolution X‐ray diffraction (XRD) prove the opposite. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)