Premium
GaInNAs(Sb) surface normal devices
Author(s) -
Calvez S.,
Laurand N.,
Sun H. D.,
Weda J.,
Burns D.,
Dawson M. D.,
Harkonen A.,
Jouhti T.,
Pessa M.,
Hopkinson M.,
Poitras D.,
Gupta J. A.,
Leburn C. G.,
Brown C. T. A.,
Sibbett W.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200777460
Subject(s) - optoelectronics , materials science , laser , semiconductor , surface modification , surface (topology) , nanotechnology , current (fluid) , optics , engineering , physics , electrical engineering , mechanical engineering , geometry , mathematics
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III–V alloys and presents current progress in their exploitation in a variety of surface‐normal operating devices such as Vertical (External)‐Cavity Surface‐Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)