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Optical and electronic properties of GaInNP alloys – a new material system for lattice matching to GaAs
Author(s) -
Buyanova I. A.,
Chen W. M.,
Tu C. W.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200777457
Subject(s) - heterojunction , conduction band , materials science , valence band , electronic structure , nitride , optoelectronics , lattice (music) , radiative transfer , band gap , band offset , valence (chemistry) , condensed matter physics , chemistry , electron , optics , nanotechnology , physics , layer (electronics) , organic chemistry , quantum mechanics , acoustics
In this paper we will review our recent results from optical characterization studies of GaInNP. We will show that N incorporation in these alloys affects their structural and defect properties, as well as the electronic structure. The main structural changes include (i) increasing carrier localization due to strong compositional fluctuations, which is typical for all dilute nitrides, and (ii) N‐induced long range ordering effects, specific for GaInNP. The observed degradation of radiative efficiency of the alloys upon increasing N content is attributed to formation of several defects acting as centres of efficient non‐radiative recombination. One of the defects is identified as a complex involving a Ga interstitial atom. N incorporation is also found to change the band line up from the type I in the GaInP/GaAs structures to the type II in the GaInNP/GaAs heterojunctions with [N] > 0.5%. For the range of N compositions studied ([N] ≤ 2%), a conduction band offset at the GaInNP/GaAs interface is found to nearly linearly depend on [N] at –0.10 eV/%, whereas the valence band offset remains unaffected. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)