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Temperature dependent site change of In in AlN and GaN
Author(s) -
Schmitz J.,
Penner J.,
Lorenz K.,
Vianden R.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200777453
Subject(s) - annealing (glass) , hyperfine structure , lattice (music) , materials science , mole fraction , fraction (chemistry) , analytical chemistry (journal) , condensed matter physics , chemistry , atomic physics , physics , metallurgy , organic chemistry , chromatography , acoustics
Hyperfine interaction studies by means of the perturbed angular correlation technique have been carried out on In implanted into GaN and AlN. After the implantation of the probe 111 In with 160 keV and annealing of the radiation damage for 120 s at 1273 K, it is found, that in both materials 50–60% of the In probes occupy regular lattice sites at room temperature. The remaining second fraction is found in a quite different but relatively well defined lattice environment. The regular fraction increases at the cost of the second fraction to approx. 100% at a sample temperature of 600 K in GaN and 900 K in AlN. The effect is completely reversible, i.e. the fractions change back to their previous values if the sample is measured again at room temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)