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Spin accumulation and magnetotransport in Co–Al–Co single‐electron transistors
Author(s) -
Shyu J. H.,
Chen J. W.,
Yao Y. D.,
Wu J. K.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200777145
Subject(s) - magnetoresistance , condensed matter physics , voltage , biasing , coulomb blockade , spin (aerodynamics) , conductance , transistor , materials science , electron , coulomb , physics , magnetic field , quantum mechanics , thermodynamics
The bias‐voltage dependent oscillations of the magnetoresistance in Co‐Al‐Co single‐electron transistors have been investigated. Above the critical voltage comprising of superconducting gap and the charging energy, the conductance‐voltage characteristics show an oscillatory behavior with increasing bias‐voltage, resulting from the Coulomb staircase. We demonstrate that magnetoresistance could vary periodically from positive to negative values with bias‐voltage. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)